CAT28F512LA12 datasheet(7/16 Pages) ONSEMI

Part #	CAT28F512LA12

Description	512K-Bit CMOS Flash Memory

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Manufacturer	ONSEMI [ON Semiconductor]

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CAT28F512

7

Doc. No. MD-1084, Rev. K

Characteristics subject to change without notice

FUNCTION TABLE(1)

Pins

Mode

CE

OE

WE

VPP

I/O

Notes

Read

VIL

VIH

VPPL

DOUT

Output Disable

VIL

VIH

X

High-Z

Standby

VIH

XX

VPPL

High-Z

Signature (MFG)

VIL

VIH

X

31H

A0 = VIL, A9 = 12V

Signature (Device)

VIL

VIH

X

B8H

A0 = VIH, A9 = 12V

Program/Erase

VIL

VIH

VIL

VPPH

DIN

See Command Table

Write Cycle

VIL

VIH

VIL

VPPH

DIN

During Write Cycle

Read Cycle

VIL

VIH

VPPH

DOUT

During Write Cycle

WRITE COMMAND TABLE

Commands are written into the command register in one or two write cycles. The command register can be altered

only when VPP is high and the instruction byte is latched on the rising edge of WE. Write cycles also internally latch

addresses and data required for programming and erase operations.

Pins

First Bus Cycle

Second Bus Cycle

Mode

Operation

Address

DIN

Operation

Address

DIN

DOUT

Set Read

Write

X

00H

Read

AIN

DOUT

Read Sig. (MFG)

Write

X

90H

Read

00

31H

Read Sig. (Device)

Write

X

90H

Read

01

B8H

Erase

Write

X

20H

Write

X

20H

Erase Verify

Write

AIN

A0H

Read

X

DOUT

Program

Write

X

40H

Write

AIN

DIN

Program Verify

Write

X

C0H

Read

X

DOUT

Reset

Write

X

FFH

Write

X

FFH

Note:

(1) Logic Levels: X = Logic ‘Do not care’ (VIH, VIL, VPPL, VPPH)

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CAT28F512LA12 Datasheet(PDF) 7 Page - ON Semiconductor

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