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CM1234 Datasheet(PDF) 8 Page - ON Semiconductor |
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CM1234 Datasheet(HTML) 8 Page - ON Semiconductor |
8 / 13 page CM1234 Rev. 3 | Page 8 of 13 | www.onsemi.com SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ∆Zo Channel-to-Channel Impedance Match (Differential) T R = 200ps 2 % Z CHANNEL Individual Channel Characteristic Imped- ance in Single-ended Connection T R = 200ps 50 Ω ∆Z CHANNEL Channel-to-Channel Impedance Match (Individual) T R = 200ps; 2 % Note 1: All parameters specified at T A = –40°C to +85°C unless otherwise noted. Performance Information Graphical Comparison and Test Setup Figure 4 shows that the CM1234(PicoGuard XS ESD protector) lowers the peak voltage and clamping voltage by 45% across a wide range of loading conditions in comparison to a standard ESD protection device. Figure 5 also indicates that the DUP/ASIC protected by the CM1235 dissipates less energy than a standard ESD protection device. This data was derived using the test setups shown in Figure 6. Figure 4. Normalized VPeak (8KV IEC-61000 4-2 ESD Contact Strike) vs. Loading (RDUP)* |
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Similar Description - CM1234 |
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