CM1236

Rev. 3 | Page 8 of 14 | www.onsemi.com

ELECTRICAL OPERATING CHARACTERISTICS

(SEE NOTE 1)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

V

IN

I/O Voltage Relative to GND

-0.5

5.5

V

I

IN

Continuous Current through signal pins

(IN to OUT) 1000 Hr

100

mA

I

F

Channel Leakage Current

T

±

0.1

±

1.0

µA

V

ESD

ESD Protection - Peak Discharge Voltage

at any channel input, in system:

Contact discharge per IEC 61000-4-2

Standard

T

±

8

kV

I

RES

Residual ESD Peak Current on RDUP

(Resistance of Device Under Protection)

IEC 61000-4-2 8kV;

RDUP = 5Ω T

3.0

A

V

CL

Channel Clamp Voltage

(Channel clamp voltage per

IEC 61000-4-5 Standard)

Positive Transients

Negative Transients

I

t

+9.2

-1.6

V

V

R

DYN

Dynamic Resistance

Positive Transients

Negative Transients

I

t

0.6

0.5

Ω

Ω

Z

TDR

Differential Impedance

TDR excursion from 100Ω

characteristic impedance trans-

mission line;

TR = 200ps; Note 2 and Note 3

97

107

Ω

Zo

Differential Channels pair characteristic

impedance

T

100

Ω

∆Zo

Channel-to-Channel Impedance Match (Dif-

ferential)

T

;

Note 2 and Note 3

2

%

Note 1: All parameters specified at T

Note 2: Impedance values for deviation from continuous 100Ω uncompensated differential microstrip, with typical layout as

measured via TDR with 200ps effective incident risetime. See Figure 7.