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LMP8645HVMK Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMP8645HVMK
Description  Precision High Voltage Current Sense Amplifier
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMP8645HVMK Datasheet(HTML) 4 Page - National Semiconductor (TI)

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12V Electrical Characteristics (Note 4)
Unless otherwise specified, all limits guaranteed for at T
A = 25°C, VS=V
+-V-, V+ = 12V, V= 0V, −2V < V
CM < 76V, Rg= 25kΩ, RL
= 10 M
Ω. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Condition
Min
(Note 6)
Typ
(Note 5)
Max
(Note 6)
Units
V
OS
Input Offset Voltage
V
CM = 2.1V
-1
-1.7
1
1.7
mV
TCV
OS
Input Offset Voltage Drift(Note 7,
Note 9)
V
CM = 2.1V
7
μV/°C
I
B
Input Bias Current(Note 10)
V
CM = 2.1V
13
23
μA
e
ni
Input Voltage Noise (Note 9)
f > 10 kHz, R
G = 5 kΩ
120
nV/
V
SENSE(MAX)
Max Input Sense Voltage(Note 9) V
CM =12V, RG = 5 kΩ
600
mV
Gain A
V
Adjustable Gain Setting (Note 9)
V
CM = 12V
1
100
V/V
Gm
Transconductance
V
CM = 2.1V
200
µA/V
Accuracy
V
CM = 2.1V
-2
-3.4
2
3.4
%
Gm drift (Note 9)
−40°C to 125°C, V
CM =2.1V
140
ppm /°C
PSRR
Power Supply Rejection Ratio
V
CM =2.1V, 2.7V <V
+ < 12V
90
dB
CMRR
Common Mode Rejection Ratio
LMP8645HV 2.1V <V
CM < 76V
LMP8645 2.1V <V
CM< 42V
95
dB
–2V <V
CM < 2V
60
BW
−3 dB Bandwidth (Note 9)
R
G = 10 kΩ, CG = 4 pF VSENSE = 400 mV,
C
L = 30 pF, RL= 1MΩ
860
kHz
R
G = 25 kΩ, CG = 4 pF, VSENSE = 400 mV,
C
L = 30 pF, RL= 1MΩ
260
R
G = 50 kΩ, CG = 4 pF, VSENSE =400 mV,
C
L = 30 pF, RL= 1MΩ
140
SR
Slew Rate(Note 8, Note 9)
V
CM = 5V, CG = 4 pF, VSENSE from 100 mV
to 500 mV, C
L = 30 pF, RL=1MΩ
0.6
V/µs
I
S
Supply Current
V
CM = 2.1V
555
765
920
uA
V
CM = −2V
2200
2900
3110
V
OUT
Maximum Output Voltage
V
CM = 12V, RG= 500kΩ
10.2
V
Minimum Output Voltage
V
CM = 2.1V
24
mV
I
OUT
Output current (Note 9)
Sourcing, V
OUT= 5.25V, Rg= 150kΩ
5
mA
Sinking, V
OUT= 5.25V, Rg= 150kΩ
5
C
LOAD
Max Output Capacitance Load
(Note 9)
30
pF
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device
is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics
Tables.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-
Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T
J(MAX), θJA, and the ambient temperature, TA. The maximum
allowable power dissipation P
DMAX = (TJ(MAX) - TA)/ θJA or the number given in Absolute Maximum Ratings, whichever is lower.
Note 4: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating
of the device such that T
J = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ >
T
A.
Note 5: Typical values represent the most likely parametric norm at the time of characterization. Actual typical values may vary over time and will also depend
on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 6: All limits are guaranteed by testing, design, or statistical analysis.
Note 7: Offset voltage temperature drift is determined by dividing the change in V
OS at the temperature extremes by the total temperature change.
www.national.com
4


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