MPSA18RLRAG datasheet(2/5 Pages) ONSEMI

Part #	MPSA18RLRAG

Description	Low Noise Transistor NPN Silicon

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Manufacturer	ONSEMI [ON Semiconductor]

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MPSA18

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 2)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

45

−

Vdc

Collector − Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

45

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.5

−

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

−

1.0

50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

(IC = 10 mAdc, VCE = 5.0 Vdc)

hFE

400

500

580

850

1100

1150

−

1500

−

Collector − Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.08

0.2

0.3

Vdc

Base − Emitter On Voltage

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

VBE(on)

−

0.6

0.7

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

100

160

−

MHz

Collector−Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

1.7

3.0

pF

Emitter−Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Ceb

−

5.6

6.5

pF

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz)

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz)

NF

−

0.5

4.0

1.5

−

dB

Equivalent Short Circuit Noise Voltage

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 100 Hz)

VT

−

6.5

−

nV

Hz

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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