VCC

BATDRV

REGN

BTST

HIDRV

PHASE

LODRV

GND

SRP

SRN

Q4

Sis412DN

L1

4.7µH

SYSTEM

C10

10µF

RSR

10m?

R1

430k

R2

66.5k

C2

0.1µF

U1

bq24725

C8

10uF

Q3

Sis412DN

Q5 (BATFET)

FDS6680A

C7

0.047µF

Adapter +

RAC 10m?

Pack +

C13

0.1µF

C6

1µF

HOST

Dig I/O

SMBus

+3.3V

C4

100p

R4

10k

R5

10k

R7

316k

ACN

ACP

CMSRC

ACDRV

ACDET

ILIM

SDA

SCL

ACOK

IOUT

Ci

2.2µF

Ri

2?

D2

BAT54C

R9

10

R3

10k

R8

100k

R10

4.02k

R11

4.02k

EN

D1

BAT54

C12

0.1µF

C14

0.1µF

C9

10uF

C11

10µF

Pack -

C3

0.1µF

C5

1µF

R6

4.02k

C1

0.1µF

Total

Csys

220µF

C15

0.01µF

C16

0.1µF

C17

2200pF

Adapter -

ADC

U2

IMD2A

Q1 (ACFET)

FDS6680A

Q2 (RBFET)

FDS6680A

PowerPad

R12

1M

R13

3.01M

Q6

BSS138W

Reverse

Input

Protection

Dig I/O

EN

bq24725

SLUS702 – JULY 2010

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

DEVICE INFORMATION

Figure 1. Typical System Schematic with Two NMOS Selector

2

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