Electronic Components Datasheet Search |
|
TPS53311RGTT Datasheet(PDF) 5 Page - Texas Instruments |
|
|
TPS53311RGTT Datasheet(HTML) 5 Page - Texas Instruments |
5 / 24 page TPS53311 www.ti.com SLUSA41 – JUNE 2010 ELECTRICAL CHARACTERISTICS (continued) over recommended free-air temperature range, VIN = 3.3 V, VVDD = 3.3 V, PGND = GND (Unless otherwise noted). PARAMETER CONDITIONS MIN TYP MAX UNIT LOGIC PINS: I/O VOLTAGE AND CURRENT VPGPD PGD pull down voltage Pull-down voltage with 4-mA sink current 0.2 0.4 V IPGLK PGD leakage current Hi-Z leakage current, apply 3.3-V in off state –2 0 2 µA RENPU Enable pull up resistor 1.35 M Ω VENH EN logic high threshold 1.10 1.18 1.30 V VENHYS EN hysteresis 0.18 0.24 V Level 1 to level 2(2) 0.12 Level 2 to level 3 0.4 PSTHS PS mode threshold voltage Level 3 to level 4 0.8 V Level 4 to level 5 1.4 Level 5 to level 6 2.2 IPS PS source 10-µA pull-up current when enabled. 8 10 12 µA fSYNCSL Slave SYNC frequency range Versus nominal switching frequency –20% 20% PWSYNC SYNC low pulse width 110 ns ISYNC SYNC pin sink current 10 µA VSYNCTHS (3) SYNC threshold Falling edge 1.0 V VSYNCHYS (3) SYNC hysteresis 0.5 V BOOT STRAP: VOLTAGE AND LEAKAGE CURRENT IVBSTLK VBST leakage current VIN = 3.3V, VVBST = 6.6 V, TA = 25°C 1 µA TIMERS: SS, FREQUENCY, RAMP, ON-TIME AND I/O TIMING tSS_1 Delay after EN asserting EN = 'HI', master or HEF mode 0.2 ms tSS_2 Delay after EN asserting EN = 'HI', slave waiting time 0.5 ms tSS_3 Soft-start ramp-up time Rising from VSS = 0 V to VSS = 0.6 V 0.4 ms Rising from VSS = 0 V to VSS = 0.6 V, tPGDENDLY PGD startup delay time 0.4 ms from VSS reaching 0.6 V to VPGD going high Overvoltage protection delay tOVPDLY Time from FB out of +20% of VREF to OVP fault 1.0 1.7 2.5 µs time Undervoltage protection delay tUVPDLY Time from FB out of -20% of VREF to UVP fault 11 µs time fSW Switching frequency control Forced CCM mode 0.99 1.1 1.21 MHz Ramp amplitude(3) 2.9 V < VIN < 6.0 V VIN/4 V FCCM mode or DE mode 100 140 tMIN(off) Minimum OFF time ns HEF mode 175 250 Maximum duty cycle, FCCM 84% 89% mode and DE mode DMAX fSW = 1.1 MHz, 0°C ≤ TA ≤ 85°C Maximum duty cycle, HEF 75% 81% mode Soft-discharge transistor RSFTSTP VEN = Low, VIN = 3.3 V, VOUT = 0.5 V 60 Ω resistance (2) See PS pin description for levels. (3) Ensured by design. Not production tested. Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s) :TPS53311 |
Similar Part No. - TPS53311RGTT |
|
Similar Description - TPS53311RGTT |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |