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NCP3985SN28T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP3985SN28T1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 10 page NCP3985 http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (Vin = Vout + 0.5 V, VCE = 1.2 V, Cin = 0.1 mF, Cout = 1 mF, Cnoise = 10 nF, TA = -40°C to 85°C, unless otherwise specified (Note 2)) Characteristic Test Conditions Symbol Min Typ Max Unit REGULATOR OUTPUT Input Voltage Vin 2.5 - 5.5 V Output Voltage (Note 3) 1.8 V 2.5 V 2.75 V 2.8 V 3.0 V 3.3 V Vin = (Vout + 0.5 V) to 5.5 V Iout = 1 mA Vout 1.764 2.450 2.695 2.744 2.940 3.234 (-2%) - - - - - - 1.836 2.550 2.805 2.856 3.060 3.366 (+2%) V Output Voltage (Note 3) 1.8 V 2.5 V 2.75 V 2.8 V 3.0 V 3.3 V Vin = (Vout + 0.5 V) to 5.5 V Iout = 1 mA to 150 mA Vout 1.746 2.425 2.6675 2.716 2.910 3.201 (-3%) - - - - - - 1.854 2.575 2.8325 2.884 3.090 3.399 (+3%) V Power Supply Ripple Rejection Vin = Vout + 0.5 V + 0.5 Vp-p Iout = 1 mA to 150 mA f = 120 Hz Cnoise = 100nF f = 1 kHz f = 10 kHz PSRR - - - 70 70 55 - - - dB Line Regulation Vin = (Vout + 0.5 V) to 5.5 V, Iout = 1 mA Regline -0.2 - 0.2 %/V Load Regulation Iout = 1 mA to 150 mA Regload - 12 25 mV Output Noise Voltage f = 10 Hz to 100 kHz Iout = 1 mA to 150 mA Cnoise = 100 nF Cnoise = 10 nF Vn - - 20 25 - - mVrms Output Current Limit Vout = Vout(nom) – 0.1 V ILIM 200 310 470 mA Output Short Circuit Current Vout = 0 V ISC 210 320 490 mA Dropout Voltage (Note 4) 2.5 V 2.75 V 2.8 V 3.0 V 3.3 V Iout = 150 mA VDO - - - - - 105 105 105 100 100 155 155 155 150 150 mV GENERAL Ground Current Iout = 1 mA Iout = 150 mA IGND - - 70 110 90 220 mA Disable Current VCE = 0 V IDIS - 0.1 1 mA Thermal Shutdown Threshold (Note 5) TSD - 150 - °C Thermal Shutdown Hysteresis (Note 5) TSH - 20 - °C CHIP ENABLE Input Threshold Low High Vth(CE) - 1.2 - - 0.4 - V Internal Pull-Down Resistance (Note 6) RPD(CE) 2.5 5 10 M W TIMING Turn-on Time Iout = 150 mA Cnoise = 10 nF Cnoise = 100 nF ton - - 0.4 4 - - ms Turn-off Time Cnoise = 10 nF/100 nF Iout = 1 mA Iout = 10 mA toff - - 800 200 - - ms 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. Contact factory for other voltage options. 4. Measured when output voltage falls 100 mV below the regulated voltage at Vin = Vout + 0.5 V if Vout < 2.5 V, then VDO = Vin - Vout at Vin = 2.5 V. 5. Guaranteed by design and characterization. 6. Expected to disable device when CE pin is floating. |
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