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ADS5400IPZP Datasheet(PDF) 2 Page - Texas Instruments

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Part # ADS5400IPZP
Description  12-Bit, 1-GSPS Analog-to-Digital Converter
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ADS5400IPZP Datasheet(HTML) 2 Page - Texas Instruments

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ADS5400
SLAS611B – OCT 2009 – REVISED MARCH 2010
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Table 1. PACKAGE/ORDERING INFORMATION
SPECIFIED
PACKAGE
PACKAGE
ORDERING
TRANSPORT
PRODUCT
PACKAGE-LEAD
TEMPERATURE
DESIGNATOR (1)
MARKING
NUMBER
MEDIA, QUANTITY
RANGE
ADS5400IPZP
Tray, 90
HTQFP-100
ADS5400
PZP
–40°C to 85°C
ADS5400I
PowerPAD
ADS5400IPZPR
Tape and reel, 1000
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
(1)
VALUE
UNIT
AVDD5 to GND
6
V
Supply voltage
AVDD3 to GND
5
V
DVDD3 to GND
5
V
AINP, AINN to GND(2)
voltage difference between pin and ground
0.5 to 4.5
V
short duration
–0.3 to (AVDD5 + 0.3)
V
voltage difference between
AINP to AINN (2)
pins, common mode at
continuous AC signal
1.25 to 3.75
V
AVDD5/2
continuous DC signal
1.75 to 3.25
V
CLKINP, CLKINN to GND (2)
voltage difference between pin and ground
0.5 to 4.5
V
voltage difference between
continuous AC signal
1.1 to 3.9
V
CLKINP to CLKINN (2)
pins, common mode at
continuous DC signal
2 to 3
V
AVDD5/2
RESETP, RESETN to GND (2)
voltage difference between pin and ground
–0.3 to (AVDD5 + 0.3)
V
continuous AC signal
1.1 to 3.9
V
voltage difference between
RESETP to RESETN (2)
pins
continuous DC signal
2 to 3
V
Data/OVR Outputs to GND (2)
–0.3 to (DVDD3 + 0.3)
SDENB, SDIO, SCLK to GND(2)
–0.3 to (AVDD3 + 0.3)
voltage difference between pin and ground
V
ENA1BUS, ENPWD, ENEXTREF
–0.3 to (AVDD5 + 0.3)
to GND(2)
Operating temperature range
–40 to 85
°C
Maximum junction temperature, TJ
150
°C
Storage temperature range
–65 to 150
°C
ESD, human-body model (HBM)
2
kV
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied. Kirkendall voidings and current density information for calculation of expected lifetime is available upon
request.
(2)
Valid when supplies are within recommended operating range.
THERMAL CHARACTERISTICS
(1)
PARAMETER
TEST CONDITIONS
TYP
UNIT
Soldered thermal pad, no airflow
28.4
RqJA
(2)
Soldered thermal pad, 150-LFM airflow
16.6
°C/W
Soldered thermal pad, 250-LFM airflow
13.5
RqJP
(3)
Bottom of package (thermal pad)
0.16
°C/W
(1)
Using 25 thermal pad vias (5 × 5 array). See PowerPAD Package in the Application Information section.
(2)
RqJA is the thermal resistance from the junction to ambient.
(3)
RqJP is the thermal resistance from the junction to the thermal pad.
2
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): ADS5400


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