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NCP5359DR2G Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP5359DR2G Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 9 page  NCP5359 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS (VCC = 12 V, TA = 0°C to +85°C, VEN = 5 V unless otherwise noted) Characteristics Symbol Test Conditions Min Typ Max Units Supply Voltage VCC Operating Voltage VCC 10 13.2 V Power ON Reset threshold VPOR 2.8 V Supply Current VCC Quiescent Supply Current in Normal Operation IVCC_NORM EN = 5 V, PWM = OSC, FSW = 100 k CLOAD = 0 p 2.0 5.0 mA VCC Standby Current IVCC_SBC EN = GND; No switching 0.5 1.0 mA BST Quiescent Supply Current in Normal Operation IBST1_normal PWM = +5 V, SW = 0 V 1.0 1.8 mA IBST2_normal PWM = GND, SW = 0 V 1.0 1.8 BST Standby Current IBST1_SD PWM = +5 V 0.25 mA IBST2_SD PWM = GND 0.25 Undervoltage Lockout VCC Start Threshold VCCTH 8.2 8.7 9.5 V VCC UVLO Hysteresis VCCHYS 1.0 V Output Overvoltage Trip Threshold at Startup OVPSU Power Startup time, VCC > 9 V. (Without trimming) 1.8 2.0 V EN Input Input Voltage High VEN_HI 2.0 V Input Voltage Low VEN_LOW 1.0 V Hysteresis (Note 5) VEN_HYS 500 mV Enable Pin Sink Current IEN_SINK VCC = 5.5 V 5.0 mA Propagation Delay Time (Note 5) tpdhEN 20 60 ns tpdlEN 20 60 ns PWM Input DRVH Comparator Drop Threshold VTH_DRVH 2.2 V PWM Input Self Bias Voltage VPWM 1.4 1.5 1.6 V DRVL Comparator Rise Threshold VTH_DRVL 0.8 V Input Current IPWM PWM = 0 V, EN = GND 30 mA High Side Driver Output Resistance, Sourcing RH_TG VBST – VSW = 12 V 2.0 3.5 W Output Resistance, Sinking RL_TG VBST – VSW = 12 V 1.0 2.5 W Transition Time (Note 7) trDRVH CLOAD = 3 nF, VBST – VSW = 12 V 16 25 ns tfDRVH CLOAD = 3 nF, VBST – VSW = 12 V 11 15 Propagation Delay (Notes 5 & 6) tpdhDRVH Driving High, CLOAD = 3 nF 10 35 ns tpdlDRVH Driving Low, CLOAD = 3 nF 8.0 30 Low Side Driver Output Resistance, Sourcing RH_BG SW = GND 2.0 3.5 W Output Resistance, Sinking RL_BG SW = VCC 1.0 2.5 W Transition Time (Note 7) trDRVL CLOAD = 3 nF 16 25 ns tfDRVL CLOAD = 3 nF 11 15 Propagation Delay (Notes 5 & 6) tpdhDRVL Driving High, CLOAD = 3 nF 10 35 ns tpdlDRVL Driving Low, CLOAD = 3 nF 8.0 30 Negative Current Detector Threshold VNCDT (Note 7) −1.0 mV Thermal Shutdown Thermal Shutdown Tsd (Note 7) 150 170 °C Thermal Shutdown Hysteresis Tsdhys (Note 7) 20 °C 5. Guaranteed by design; not tested in production . 6. For propagation delays, ”tpdh” refers to the specified signal going high ”tpdl” refers to it going low. 7. Design guaranteed. |
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