TPS23754 datasheet(11/41 Pages) TI

Part #	TPS23754

Description	High Power/High Efficiency PoE Interface and DC/DC Controller

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Manufacturer	TI [Texas Instruments]

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TJ − Junction Temperature − °C

910

920

930

940

950

960

970

−40

−20

0

20

40

60

80

100

120

G002

Pulsed Current Measurement

(VVDD − VVSS) − PoE Voltage − V

0

1

2

3

4

5

6

7

8

0

2

4

6

8

10

G001

−40

°C

25

°C

125

°C

TPS23754

TPS23754-1

TPS23756

www.ti.com

SLVS885D – OCTOBER 2008 – REVISED DECEMBER 2009

A minimum 0.47

μF capacitor, located adjacent to the VC pin, should be connected from VC to COM to bypass

the gate driver. A larger total capacitance is required for startup to provide control power between the time the

converter starts switching and the availability of the converter auxiliary output voltage.

VDD

VDD is the positive input power rail that is derived from the PoE source (PSE). VDD should be bypassed to VSS

with a 0.1

μF capacitor as required by the IEEE standard. A transient suppressor diode (TVS), a special type of

Zener diode, such as SMAJ58A should be connected from VDD to VSS to protect against over-voltage transients.

VDD1

VDD1 is the dc/dc converter startup supply. Connect to VDD for many applications. VDD1 may be isolated by a

diode from VDD to support PoE priority operation.

VSS

VSS is the PoE input-power return side. It is the reference for the PoE interface circuits, and has a current-limited

hotswap switch that connects it to RTN. VSS is clamped to a diode drop above RTN by the hotswap switch.

A local VSS reference plane should be used to connect the input bypass capacitor, TVS, RCLS, and the

PowerPad. This plane becomes the main heatsink for the TPS23754.

VSS is internally connected to the PowerPAD.

PowerPAD

The Powerpad is internally connected to VSS. It should be tied to a large VSS copper area on the PCB to provide

a low resistance thermal path to the circuit board. It is recommended that a clearance of 0.025” be maintained

between VSS, RTN, and various control signals to high-voltage signals such as VDD and VDD1.

TYPICAL CHARACTERISTICS

DETECTION BIAS CURRENT

PoE CURRENT LIMIT

vs

VOLTAGE

TEMPERATURE

Figure 3.

Figure 4.

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