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BGR269 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BGR269 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 8 page 1. Product profile 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC). 1.2 Features and benefits Excellent linearity Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability 35 dB amplification up to 200 MHz 1.3 Applications Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz frequency range 1.4 Quick reference data [1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB =35V. BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Gp power gain f = 5 MHz 34.5 35 35.5 dB f=200MHz 35 - 36 dB Itot total current VB =24V [1] 145 160 175 mA |
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Similar Description - BGR269 |
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