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FMA9 Datasheet(PDF) 1 Page - Rohm

Part # FMA9
Description  Digital transistor (Common Emitter Dual Transistors)
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

FMA9 Datasheet(HTML) 1 Page - Rohm

  FMA9 Datasheet HTML 1Page - Rohm FMA9 Datasheet HTML 2Page - Rohm  
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UMA9N / FMA9A
Transistors
Digital transistor
(Common Emitter Dual Transistors)
UMA9N / FMA9N
!
!
!
!Features
1) Two DTA114E chips in UMT and
SMT packages.
2) Mounting cost and area can be cut
in half.
!
!
!
!Structure
Epitaxial planar type
PNP silicon transistor
(Built-in resistor type)
The following characteristics apply to
both DTr1 and DTr2.
!
!
!
!External dimensions
(Units : mm)
ROHM : UMT5
EIAJ : SC-88A
ROHM : SMT5
EIAJ : SC-74A
UMA9N
FMA9A
−0.05
+0.1
0~0.1
0.15±0.05
0.2
0.9±0.1
0.7
2.0±0.2
1.3±0.1
0.65
0.65
(3)
(2)
(4)
(5)
(1)
(1)
(2)
0.3 +0.1
−0.05
(5)
(4)
(3)
0.95 0.95
1.9±0.2
2.9±0.2
1.1 +0.2
0.8±0.1
−0.1
0~0.1
0.15 −0.06
+0.1
R1
R1
DTr1
DTr2
(3)
(4)
(5)
(2)
(1)
R1
R1
DTr1
DTr2
(3)
(2)
(1)
(4)
(5)
R1 = 10k
R2 = 10k
R1 = 10k
R2 = 10k
R2
R2
R2
R2
Abbreviated symbol: A10
All terminals have same
dimensions.
All terminals have same
dimensions.
!
!
!
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Symbol
Limits
Unit
VCC
−50
V
VIN
−40
V
10
IO
−50
mA
−100
Tj
150
°C
Tstg
−50~+150
°C
Pd
UMA9N
150 (TOTAL)
mW
FMA9A
300 (TOTAL)
*1
*2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
*1 120mW per element must not be exceeded.
*2 200mW per element must not be exceeded.
IC (MAX.)
!
!
!
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
VI (off)
VI (on)
VO (on)
II
IO (off)
R1
GI
R2/R1
Min.
−3.0
7
30
0.8
10
1
−0.5
−0.3
−0.1
−0.88
−0.5
13
1.2
V
VCC
=
−5V, IO = −100µA
VO
=
−0.3V, IO = −10mA
IO/II
=
−10mA / −0.5mA
VI
=
−5V
VCC
=
−50V, VI = 0V
IO
=
−5mA, VO = −5V
V
mA
µA
k
−−
Typ.
Max.
Unit
Conditions
fT
250
VCE
=
−10mA, IE = 5mA, f = 100MHZ
MHz
*
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
* Transition frequency of the device


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