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FMA9 Datasheet(PDF) 1 Page - Rohm |
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FMA9 Datasheet(HTML) 1 Page - Rohm |
1 / 2 page UMA9N / FMA9A Transistors Digital transistor (Common Emitter Dual Transistors) UMA9N / FMA9N ! ! ! !Features 1) Two DTA114E chips in UMT and SMT packages. 2) Mounting cost and area can be cut in half. ! ! ! !Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type) The following characteristics apply to both DTr1 and DTr2. ! ! ! !External dimensions (Units : mm) ROHM : UMT5 EIAJ : SC-88A ROHM : SMT5 EIAJ : SC-74A UMA9N FMA9A −0.05 +0.1 0~0.1 0.15±0.05 0.2 0.9±0.1 0.7 2.0±0.2 1.3±0.1 0.65 0.65 (3) (2) (4) (5) (1) (1) (2) 0.3 +0.1 −0.05 (5) (4) (3) 0.95 0.95 1.9±0.2 2.9±0.2 1.1 +0.2 0.8±0.1 −0.1 0~0.1 0.15 −0.06 +0.1 R1 R1 DTr1 DTr2 (3) (4) (5) (2) (1) R1 R1 DTr1 DTr2 (3) (2) (1) (4) (5) R1 = 10k Ω R2 = 10k Ω R1 = 10k Ω R2 = 10k Ω R2 R2 R2 R2 Abbreviated symbol: A10 All terminals have same dimensions. All terminals have same dimensions. ! ! ! !Absolute maximum ratings (Ta = 25 °C) Parameter Symbol Limits Unit VCC −50 V VIN −40 V 10 IO −50 mA −100 Tj 150 °C Tstg −50~+150 °C Pd UMA9N 150 (TOTAL) mW FMA9A 300 (TOTAL) *1 *2 Supply voltage Input voltage Output current Junction temperature Storage temperature Power dissipation *1 120mW per element must not be exceeded. *2 200mW per element must not be exceeded. IC (MAX.) ! ! ! !Electrical characteristics (Ta = 25 °C) Parameter Symbol VI (off) VI (on) VO (on) II IO (off) R1 GI R2/R1 Min. − −3.0 − − − 7 30 0.8 − − − − 10 − 1 −0.5 − −0.3 −0.1 −0.88 −0.5 13 − 1.2 V VCC = −5V, IO = −100µA VO = −0.3V, IO = −10mA IO/II = −10mA / −0.5mA VI = −5V VCC = −50V, VI = 0V − IO = −5mA, VO = −5V V mA µA k Ω − −− Typ. Max. Unit Conditions fT − 250 − VCE = −10mA, IE = 5mA, f = 100MHZ MHz * Input voltage Output voltage Input current Output current Input resistance DC current gain Transition frequency Resistance ratio * Transition frequency of the device |
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