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K6T1008C2E-F Datasheet(PDF) 8 Page - Samsung semiconductor |
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K6T1008C2E-F Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 10 page CMOS SRAM K6T1008C2E Family Revision 3.0 March 2000 8 DATA RETENTION WAVE FORM CS1 controlled VCC 4.5V 2.2V VDR CS1 GND Data Retention Mode CS ≥VCC - 0.2V tSDR tRDR TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled) Address CS1 tAW NOTES (WRITE CYCLE) 1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low, CS2 going high and WE going low: A write end at the earliest transition among CS1 going high, CS2 going low and WE going high, tWP is measured from the begining of write to the end of write. 2. tCW is measured from the CS1 going low or CS2 going high to the end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR1 applied in case a write ends as CS1 or WE going high tWR2 applied in case a write ends as CS2 going to low. CS2 tCW(2) WE Data in Data Valid Data out High-Z High-Z tCW(2) tWR(4) tWP(1) tDW tDH tAS(3) tWC CS2 controlled VCC 4.5V 0.4V VDR CS2 GND Data Retention Mode tSDR tRDR CS2 ≤0.2V |
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Similar Description - K6T1008C2E-F |
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