Electronic Components Datasheet Search |
|
K6R1008C1C-J10 Datasheet(PDF) 8 Page - Samsung semiconductor |
|
K6R1008C1C-J10 Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 9 page K6R1008C1C-C/C-L, K6R1008C1C-I/C-P CMOS SRAM PRELIMINARY Revision 3.0 - 8 - September 2001 PRELIMINARY DATA RETENTION CHARACTERISTICS*(TA=0 to 70 °C) * The above parameters are also guaranteed at industrial temperature range. Data Retention Characteristic is for L-ver only. Parameter Symbol Test Condition Min. Typ. Max. Unit VCC for Data Retention VDR CS ≥VCC-0.2V 2.0 - 5.5 V Data Retention Current IDR VCC=3.0V, CS ≥VCC-0.2V VIN ≥VCC-0.2V or VIN≤0.2V - - 0.4 mA VCC=2.0V, CS ≥VCC-0.2V VIN ≥VCC-0.2V or VIN≤0.2V - - 0.3 Data Retention Set-Up Time tSDR See Data Retention Wave form(below) 0 - - ns Recovery Time tRDR 5 - - ms DATA RETENTION WAVE FORM CS controlled VCC 4.5V VIH VDR CS GND Data Retention Mode CS ≥VCC - 0.2V tSDR tRDR |
Similar Part No. - K6R1008C1C-J10 |
|
Similar Description - K6R1008C1C-J10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |