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K9F1G16U0M-PCB0 Datasheet(PDF) 3 Page - Samsung semiconductor |
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K9F1G16U0M-PCB0 Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 38 page FLASH MEMORY 2 SAMSUNG K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0 K9F1G08U0M-VCB0,VIB0,FCB0,FIB0 Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. Revision No 0.7 0.8 Remark History Errata is added.(Front Page)-K9F1GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Specification 45 25 15 50 15 25 30 45 Relaxed value 80 60 20 60 80 60 60 75 1. The 3rd Byte ID after 90h ID read command is don’t cared. The 5th Byte ID after 90h ID read command is deleted. Draft Date Mar.17. 2003 Apr. 9. 2003 |
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