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KM416V4100B Datasheet(PDF) 7 Page - Samsung semiconductor |
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KM416V4100B Datasheet(HTML) 7 Page - Samsung semiconductor |
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7 / 35 page  KM416V4000B, KM416V4100B CMOS DRAM TEST MODE CYCLE Parameter Symbol -45 -5 -6 Units Note Min Max Min Max Min Max Random read or write cycle time tRC 85 95 115 ns Read-modify-write cycle time tRWC 120 138 160 ns Access time from RAS tRAC 50 55 65 ns 3,4,10,12 Access time from CAS tCAC 17 18 20 ns 3,4,5,12 Access time from column address tAA 28 30 35 ns 3,10,12 RAS pulse width tRAS 50 10K 55 10K 65 10K ns CAS pulse width tCAS 17 10K 18 10K 20 10K ns RAS hold time tRSH 17 18 20 ns CAS hold time tCSH 50 55 65 ns Column Address to RAS lead time tRAL 28 30 35 ns CAS to W delay time tCWD 37 41 43 ns 7 RAS to W delay time tRWD 72 78 88 ns 7 Column Address to W delay time tAWD 48 53 58 ns 7 Fast Page mode cycle time tPC 36 40 45 ns Fast Page mode read-modify-write cycle time tPRWC 75 81 90 ns RAS pulse width (Fast page cycle) tRASP 50 200K 55 200K 65 200K ns Access time from CAS precharge tCPA 31 35 40 ns 3 OE access time tOEA 17 18 20 ns OE to data delay tOED 17 18 18 ns OE command hold time tOEH 17 18 20 ns ( Note 11 ) |
Similar Part No. - KM416V4100B |
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Similar Description - KM416V4100B |
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