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KM44C4000C Datasheet(PDF) 8 Page - Samsung semiconductor |
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KM44C4000C Datasheet(HTML) 8 Page - Samsung semiconductor |
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8 / 20 page  KM44C4000C, KM44C4100C CMOS DRAM KM44V4000C, KM44V4100C NOTES An initial pause of 200us is required after power-up followed by any 8 RAS-only refresh or CAS-before-RAS refresh cycles before proper device operation is achieved. VIH(min) and VIL(max) are reference levels for measuring timing of input signals. Transition times are measured between VIH(min) and VIL(max) and are assumed to be 5ns for all inputs. Measured with a load equivalent to 2 TTL(5V)/1 TTL(3.3V) loads and 100pF. Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC. Assumes that tRCD ≥tRCD(max). tOFF(min)and tOEZ(max) define the time at which the output achieves the open circuit condition and are not referenced Voh or Vol. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electrical char- acteristics only. If tWCS ≥tWCS(min), the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWD ≥tCWD(min), tRWD≥tRWD(min) and tAWD≥tAWD(min), then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions is satisfied, the condition of the data out is indeterminate. Either tRCH or tRRH must be satisfied for a read cycle. These parameters are referenced to CAS falling edge in early write cycles and to W falling edge in read-modify-write cycles. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit, then access time is controlled by tAA. These specifications are applied in the test mode. In test mode read cycle, the value of tRAC, tAA, tCAC is delayed by 2ns to 5ns for the specified values. These parameters should be specified in test mode cycles by adding the above value to the specified value in this data sheet. If tRASS ≥100us, then RAS precharge time must use tRPS instead of tRP. For RAS-only refresh and burst CAS-before-RAS refresh mode, 4096(4K)/2048(2K) cycles of burst refresh must be exe- cuted within 64ms/32ms before and after self refresh, in order to meet refresh specification. For distributed CAS-before-RAS with 15.6us interval CAS-before-RAS refresh should be executed with in 15.6us immedi- ately before and after self refresh in order to meet refresh specification. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 1. 2. 3. 4. 15. |
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