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KM68512ALG-5 Datasheet(PDF) 2 Page - Samsung semiconductor

Part # KM68512ALG-5
Description  64Kx8 bit Low Power CMOS Static RAM
Download  9 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68512ALG-5 Datasheet(HTML) 2 Page - Samsung semiconductor

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KM68512A Family
CMOS SRAM
Revision 4.0
January 1997
2
64Kx8 bit Low Power CMOS Static RAM
GENERAL DESCRIPTION
The KM68512A families are fabricated by SAMSUNG
′s
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
• Process Technology: Poly Load
• Organization: 64Kx8
• Power Supply Voltage: 4.5~5.5V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP1-0820F
PIN DESCRIPTION
Name
Function
CS1, CS2
Chip Select Inputs
OE
Output Enable Input
WE
Write Enable Input
A0~A15
Address Inputs
I/O1~I/O8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C
No Connection
PRODUCT FAMILY
Product Family
Operating Temperature
VCC Range
Speed
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
KM68512AL
Commercial (0~70
°C)
4.5 to 5.5V
55/70ns
100
µA
70mA
32-SOP
32-TSOP1-F
KM68512AL-L
20
µA
KM68512ALI
Industrial (-40~85
°C)
70ns
100
µA
KM68512ALI-L
50
µA
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
A11
A9
A8
A13
WE
CS2
A15
NC
NC
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP
Type1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
N.C
VCC
Precharge circuit.
Memory array
512 rows
128
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A8
A9
A11
A10
A3
A4
A5
A6
A7
A12
A14
CS1
CS2
WE
I/O1
Data
cont
Data
cont
OE
I/O8
A13
A15
Control
Logic


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