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S1T8528X0 Datasheet(PDF) 9 Page - Samsung semiconductor |
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S1T8528X0 Datasheet(HTML) 9 Page - Samsung semiconductor |
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9 / 35 page  ENHANCED-1 CHIP CT0 RF IC S1T8528 9 Second Mixer input Impedance RI(2M) Fc = 10.7MHz − 4 − k Ω Second Mixer output Impedance Ro(2M) Fc = 455kHz − 1.5 − k Ω Carrier Detector Threshold CDTH MIX1 Single-Ended Matching, Default Threshold=1010 − −95 − dBm Low Battery Detector LBD LBD0 ~ LBD3 = 0 ( Default ) Only LBD2 = 0 Only LBD1 = 0 Only LBD3 = 0 LBD0 ~ LBD3 = 1 − 0.15 3.45 3.3 3.0 0.1 V −0.1 2.2 2.1 0.075 RSSI Slope VRSSI MIX1 Single-Ended Matching − 30 − mV/dB RSSI Output Voltage Dynamic Range RSSI MIX1 Single-Ended Matching − 60 − dB Carrier Detect Output High Voltage VOH RFin = 1 µVrms Default Threshold = 1010 Vcc-0.4 − − V Carrier Detect Output Low Voltage VOL RFin = 10 µVrms Default Threshold = 1010 − − 0.4 V COMPRESSOR ( Vcc = 3.6V, fc = 1kHz, Ta = 25°C, unless otherwise specified ) Standard Output Voltage Vo(com) Vinc = 63.2mVrms → 0dB ALC disabled (pin 13) 269 316 363 mVrms Compressor Gain Difference ∆G V1(COM) Vinc = −20dB −10 0 1.0 dB ∆G V2(COM) Vinc = −40dB −1.5 0 1.5 dB Compressor Output Distortion THDCOM Vinc = 63.2mVrms → 0dB − 0.5 1.0 % Mute Attenuation Ratio ATTMUTE Vinc = 0dB 60 80 − dB Compressor Limiting Voltage VLIM(COM) Vinc = Variable 1.05 1.35 1.65 Vp-p ALC VALC RALC = 150kΩ, Vinc = 10dB 310 390 450 mVrms Splatter filter Vo(SF) VINC = 63.2mVrms → 0 dB 269 316 363 mVrms Maximum Output Voltage VOMIC(MAX) RL = 10K Ω − 2.8 − Vp-p EXPANDER (Vcc = 3.6V, fc = 1kHz, Ta = 25°C, unless otherwise specified) Standard Output Voltage V O(EXP) VinE = 63.2mVrms → 0dB 309 356 403 mVrms ELECTRICAL CHARACTERISTICS (Continued) Characteristic Symbol Test Conditions Min. Typ. Max. Unit |
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