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K9K2G08Q0M-P Datasheet(PDF) 2 Page - Samsung semiconductor |
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2 / 39 page FLASH MEMORY 2 K9W4G08U1M K9W4G16U1M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M K9K2G16U0M Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office. Revision No 0.9 1.0 1.1 1.2 1.3 1.4 Remark History Pb-free Package is added. K9K2G08U0M-FCB0,FIB0 K9K2G08Q0M-PCB0,PIB0 K9K2G08U0M-PCB0,PIB0 K9K2G16U0M-PCB0,PIB0 K9K2G16Q0M-PCB0,PIB0 K9W4G08U1M-PCB0,PIB0,ECB0,EIB0 K9W4G16U1M-PCB0,PIB0,ECB0,EIB0 Errata is added.(Front Page)-K9K2GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Specification 45 25 15 50 15 25 30 45 Relaxed value 80 60 20 80 20 60 60 75 1. The 3rd Byte ID after 90h ID read command is don’t cared. The 5th Byte ID after 90h ID read command is deleted. New package dimension is added.(K9W4GXXU1M-KXB0/EXB0) 1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed . - min. 4036 --> 4016 2. Note is added. (VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.) AC parameters are changed-K9K2GXXQ0M tWC tWP tWH tRC tREH tRP tREA tCEA Before 45 25 15 50 15 25 30 45 After 80 60 20 80 20 60 60 75 Draft Date Mar. 13.2003 Mar. 17.2003 Apr. 9. 2003 Apr. 15. 2003 Apr. 18. 2003 Aug. 5. 2003 |
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