FLASH MEMORY

2

K9W4G08U1M

K9W4G16U1M

K9K2G08U0M

K9K2G16Q0M

K9K2G08Q0M

K9K2G16U0M

Document Title

Revision History

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

Revision No

0.9

1.0

1.1

1.2

1.3

1.4

Remark

History

Pb-free Package is added.

K9K2G08U0M-FCB0,FIB0

K9K2G08Q0M-PCB0,PIB0

K9K2G08U0M-PCB0,PIB0

K9K2G16U0M-PCB0,PIB0

K9K2G16Q0M-PCB0,PIB0

K9W4G08U1M-PCB0,PIB0,ECB0,EIB0

K9W4G16U1M-PCB0,PIB0,ECB0,EIB0

Errata is added.(Front Page)-K9K2GXXQ0M

tWC tWP tWH tRC tREH tRP tREA tCEA

Specification

45

25

15

50

15

25

30

45

Relaxed value

80

60

20

80

20

60

60

75

1. The 3rd Byte ID after 90h ID read command is don’t cared.

The 5th Byte ID after 90h ID read command is deleted.

New package dimension is added.(K9W4GXXU1M-KXB0/EXB0)

1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .

- min. 4036 --> 4016

2. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

AC parameters are changed-K9K2GXXQ0M

tWC tWP tWH tRC tREH tRP tREA tCEA

Before

45

25

15

50

15

25

30

45

After

80

60

20

80

20

60

60

75

Draft Date

Mar. 13.2003

Mar. 17.2003

Apr. 9. 2003

Apr. 15. 2003

Apr. 18. 2003

Aug. 5. 2003