2SA1303 datasheet(1/1 Pages) SANKEN

Part #	2SA1303

Description	Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

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Manufacturer	SANKEN [Sanken electric]

Direct Link	http://www.sanken-ele.co.jp/en

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∗hFE Rank O(50to100), P(70to140), Y(90to180)

17

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)

Application : Audio and General Purpose

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Ratings

–150

–5

–14

–3

125(Tc=25°C)

150

–55 to +150

Unit

V

A

W

°C

sAbsolute maximum ratings

sElectrical Characteristics

sTypical Switching Characteristics (Common Emitter)

Symbol

ICBO

IEBO

V(BR)CEO

hFE

VCE(sat)

fT

COB

Ratings

–100max

–150min

50min

–2.0max

50typ

400typ

Unit

µA

V

MHz

pF

Conditions

VCB=–150V

VEB=–5V

IC=–25mA

VCE=–4V, IC=–5A

IC=–5A, IB=–0.5A

VCE=–12V, IE=2A

VCB=–10V, f=1MHz

VCC

(V)

–60

RL

(

Ω)

12

IC

(A)

–5

VBB2

(V)

5

IB2

(mA)

500

ton

(

µs)

0.25typ

tstg

(

µs)

0.85typ

tf

(

µs)

0.2typ

IB1

(mA)

–500

LAPT

2SA1303

(Ta=25°C)

I C– V CE Characteristics (Typical)

h FE– I C Characteristics (Typical)

Safe Operating Area (Single Pulse)

h FE– I C Temperature Characteristics (Typical)

V CE(sat) – I B Characteristics (Typical)

Pc – T a Derating

0

–4

–8

–12

–1

–2

–3

–4

Collector-Emitter Voltage V CE(V)

–50mA

–100mA

I B=–20mA

–500mA

–400mA –300mA

–200mA

–150mA

0

–3

–2

–1

0

–0.2

–0.4

–1.0

–0.6

–0.8

Base Current I B(A)

I C=–10A

–5A

–0.02

–0.1

–1

–0.5

–10

–5

–14

20

50

100

200

Collector Current I C(A)

(V CE=–4V)

Typ

–3

–10

–100

–200

–0.2

–1

–0.5

–10

–40

–5

Collector-Emitter Voltage V CE(V)

Without Heatsink

Natural Cooling

DC

0.02

0.1

1

1 0

0

20

40

60

80

(V CE=–12V)

Emitter Current I E(A)

Typ

0.1

1

3

0.5

1

1 0

100

1000

2000

Time t(ms)

θj-a–t Characteristics

f T– I E Characteristics (Typical)

(V CE=–4V)

–0.02

–0.1

–0.5

–1

–5

–10 –14

30

50

100

200

Collector Current I C(A)

125˚C

25˚C

–30˚C

130

100

50

3.5

0

2 5

5 0

7 5

100

125

150

Ambient Temperature Ta(˚C)

Without Heatsink

I C– V BE Temperature Characteristics (Typical)

0

–14

–10

–5

0– 2

–1

Base-Emittor Voltage V BE(V)

(V CE=–4V)

VBB1

(V)

–10

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

ø3.2±0.1

2

3

1.05

+0.2

-0.1

BE

5.45±0.1

C

4.8±0.2

0.65

+0.2

-0.1

1.4

2.0±0.1

a

b

Weight : Approx 6.0g

a. Part No.

b. Lot No.

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