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1SV316 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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1SV316 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. Silicon Epitaxial Pin Diode Variabe resistance Attenuator Use Ordering number:ENN6262 1SV316 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73099GI (KT) No.6262–1/3 0.4 0.95 0.95 1.9 2.9 0.16 0 to 0.1 2 3 1 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 1251A [1SV316] Features · Ultrasmall-sized package facilitates high-density mounting and permits 1SV316-applied equipment to be made smaller. · Small interterminal capacitance (C=0.23pF typ). Electrical Connection ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Anode 2 : Cathode 3 : Cathode/Anode SANYO : CP Note ) The specifications shown above are for each individual diode. Marking : UV r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e RVR 0 5V t n e r r u C d r a w r o FIF 0 5A m n o i t a p i s s i D r e w o P e l b a w o ll AP 0 5 1W m e r u t a r e p m e T n o i t c n u Jj T 5 2 1 e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V e s r e v e RVR IR A µ 0 1 =0 5V t n e r r u C e s r e v e RIR VR V 0 5 = 1 . 0A µ e g a t l o V d r a w r o F VF IF A m 0 5 =5 9 . 00 . 1V e c n a t i c a p a C l a n i m r e t r e t n IC VR z H M 1 = f , V 0 5 =3 2 . 0F p e c n a t s i s e R s e i r e Ss r IF z H M 0 0 1 = f , A µ 0 1 =0 0 4 2 Ω IF z H M 0 0 1 = f , A m 0 1 = 469 Ω 1 Anode 2 Cathode Cathode / Anode 3 |
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