ABSOLUTE MAXIMUM RATINGS

(1)

POWER DISSIPATION RATINGS

THERMAL CHARACTERISTICS

KEY ATTRIBUTES

SN65ELT22

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PARAMETER

CONDITIONS

VALUE

UNIT

GND = 0 V

6

V

GND = 0 V

V

Continuous

50

Output current

mA

Surge

100

Operating temperature range

–40 to 85

°C

Storage temperature range

–65 to 150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any conditions beyond those indicated under recommended operating conditions

is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

POWER RATING

THERMAL RESISTANCE,

DERATING FACTOR

POWER RATING

CIRCUIT BOARD

JUNCTION-TO-AMBIENT

PACKAGE

MODEL

NO AIRFLOW

(mW)

(mW/°C)

(mW)

Low-K

719

139

7

288

SOIC

High-K

840

119

8

336

Low-K

469

213

5

188

SOIC-TSSOP

High-K

527

189

5

211

PARAMETER

MIN

TYP

MAX

UNIT

SOIC

79

θ

JB

Junction-to-board thermal resistance

°C/W

SOIC-TSSOP

120

SOIC

98

θ

JC

Junction-to-case thermal resistance

°C/W

SOIC-TSSOP

74

CHARACTERISTICS

VALUE

Moisture sensitivity level

Level 1

Flammability rating (oxygen index: 28 to 34)

UL 94 V-0 at 0.125 in

Human body model

4 kV

Electrostatic discharge

Charge device model

2 kV

Machine model

200 V

Meets or exceeds JEDEC Spec EIA/JESD78 latchup test

2

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