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SG75S12S Datasheet(PDF) 3 Page - Sirectifier Global Corp. |
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SG75S12S Datasheet(HTML) 3 Page - Sirectifier Global Corp. |
3 / 7 page SG75S12S Discrete IGBTs Thermal Characteristics (Tj = 25°C, unless specified otherwise) Parameter Symbol Conditions min. typ. max. Unit IGBT Thermal Resistance Junction to Heatsink Rth j-h Igbt 0.370 °C/W Diode Thermal Resistance Junction to Heatsink 0.740 Equivalent IGBT Thermal Resistance Junct. to Case 0.235 Equivalent Diode Thermal Resistance Junct. to Case Heatsink: flatness < +/-20µm, roughness < 6µm without ridge Thermal grease: thickness: 30µm < t < 50µm 0.550 °C/W Rth j-h Diode Rth j-c Igbt °C/W Rth j-c Diode °C/W Diode Characteristic Values (Tj = 25°C, unless specified otherwise) Parameter Symbol Conditions min. typ. max. Unit Tvj = 25°C 2.00 2.40 Forward Voltage VF* IF = 75A 2.00 V Reverse Recovery Current Irrm 75 A Reverse Recovery Charge Qrr 14 µC Reverse Recovery Time trr IF = 75A, Rgon = 15 , VCC = 600V, VGE = +15V, Tvj = 125°C 0.35 µs Reverse Recovery Energy Erec IF = 75A, Tvj = 125°C, VCC = 600V, Rgon = 15 , VGE = +15V, inductive load, fully integrated 5.5 mJ Ths = 25°C 1.25 Resistance terminal-chip RCC'+EE' 1.90 m * Note 2: Forward voltage is gaiven at die level Tvj = 125°C _ _ Ths = 125°C |
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