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IRLML0100TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLML0100TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLML0100TRPbF 2 www.irf.com Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C ––– 190 235 ––– 178 220 VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V IDSS ––– ––– 20 ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 1.3 ––– Ω gfs Forward Transconductance 5.7 ––– ––– S Qg Total Gate Charge ––– 2.5 ––– Qgs Gate-to-Source Charge ––– 0.5 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.2 ––– td(on) Turn-On Delay Time ––– 2.2 ––– tr Rise Time ––– 2.1 ––– td(off) Turn-Off Delay Time ––– 9.0 ––– tf Fall Time ––– 3.6 ––– Ciss Input Capacitance ––– 290 ––– Coss Output Capacitance ––– 27 ––– Crss Reverse Transfer Capacitance ––– 13 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 20 30 ns Qrr Reverse Recovery Charge ––– 13 20 nC ––– ––– ––– ––– pF A 1.1 7.0 VDD =50V d nA nC ns VDS = VGS, ID = 25µA VDS =100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C RDS(on) VGS = 10V, ID = 1.6A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current µA m Ω Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 1.3A d MOSFET symbol showing the VDS =50V Conditions VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz RG = 6.8 Ω VGS = 4.5V d di/dt = 100A/µs d VGS = 16V VGS = -16V TJ = 25°C, IS = 1.1A, VGS = 0V d integral reverse p-n junction diode. VDS = 50V, ID = 1.6A ID = 1.6A ID = 1.0A TJ = 25°C, VR = 50V, IF=1.1A |
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