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IRLML9301TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRLML9301TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLML9301TRPbF 2 www.irf.com G D S Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C ––– 51 64 ––– 82 103 VGS(th) Gate Threshold Voltage -1.3 ––– -2.4 V IDSS ––– ––– 1 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 RG Internal Gate Resistance ––– 12 ––– Ω gfs Forward Transconductance 5.0 ––– ––– S Qg Total Gate Charge ––– 4.8 ––– Qgs Gate-to-Source Charge ––– 1.2 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 2.5 ––– td(on) Turn-On Delay Time ––– 9.6 ––– tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 15 ––– Ciss Input Capacitance ––– 388 ––– Coss Output Capacitance ––– 93 ––– Crss Reverse Transfer Capacitance ––– 65 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 7.2 11 nC ––– ––– ––– ––– pF A -1.3 -15 VDD =-15Vd nA nC ns VDS = VGS, ID = -10µA VDS =-24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C RDS(on) VGS = -4.5V, ID = -2.9A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current µA m Ω Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -3.6A d MOSFET symbol showing the VDS =-15V Conditions VGS = -4.5V VGS = 0V VDS = -25V ƒ = 1.0KHz RG = 6.8Ω VGS = -4.5V d di/dt = 100A/µs d VGS = -20V VGS = 20V TJ = 25°C, IS = -1.3A, VGS = 0V d integral reverse p-n junction diode. VDS = -10V, ID =-3.6A ID = -3.6A ID = -1A TJ = 25°C, VR = -24V, IF=-1.3A |
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