Electronic Components Datasheet Search |
|
BUK9506-75B Datasheet(PDF) 9 Page - NXP Semiconductors |
|
BUK9506-75B Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page Philips Semiconductors BUK95/9606-75B TrenchMOS™ logic level FET Product data Rev. 02 — 30 September 2002 9 of 15 9397 750 10279 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. VGS =0V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 03ng82 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS (V) ID (A) Tj = 175 ºC Tj = 25 ºC 03ng80 0 1 2 3 4 5 0 2040 6080 100 QG (nC) VGS (V) VDD = 14 V VDD = 60 V 03ng79 0 20 40 60 80 100 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) IS (A) Tj = 175 ºC Tj = 25 ºC |
Similar Part No. - BUK9506-75B |
|
Similar Description - BUK9506-75B |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |