Philips Semiconductors

BUK95/9606-75B

TrenchMOS™ logic level FET

Product data

Rev. 02 — 30 September 2002

9 of 15

9397 750 10279

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of turn-on

gate charge; typical values.

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.

03ng82

0

20

40

60

80

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS (V)

ID

(A)

Tj = 175 ºC

Tj = 25 ºC

03ng80

0

1

2

3

4

5

0

2040

6080

100

QG (nC)

VGS

(V)

VDD = 14 V

VDD = 60 V

03ng79

0

20

40

60

80

100

0.0

0.2

0.4

0.6

0.8

1.0

VSD (V)

IS

(A)

Tj = 175 ºC

Tj = 25 ºC