Philips Semiconductors

BUK95/9606-40B

TrenchMOS™ logic level FET

Product data

Rev. 01 — 14 May 2003

2 of 15

9397 750 11241

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

3.

Limiting values

[1]

Current is limited by power dissipation chip rating.

[2]

Continuous current is limited by package.

Table 2:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

drain-source voltage (DC)

-

40

V

drain-gate voltage (DC)

-40

V

gate-source voltage (DC)

-

±15

V

drain current (DC)

Figure 2 and 3

[1]

-

129

A

[2]

-75

A

[2]

-75

A

peak drain current

Figure 3

-

516

A

total power dissipation

-

203

W

storage temperature

−55

+175

°C

junction temperature

−55

+175

°C

Source-drain diode

reverse drain current (DC)

[1]

-

129

A

[2]

-75

A

peak reverse drain current

-

516

A

Avalanche ruggedness

energy

-

494

mJ