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BUK7507-30B Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BUK7507-30B
Description  TrenchMOS standard level FET
Download  15 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK7507-30B Datasheet(HTML) 2 Page - NXP Semiconductors

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Philips Semiconductors
BUK75/7607-30B
TrenchMOS™ standard level FET
Product data
Rev. 01 — 07 April 2003
2 of 15
9397 750 11232
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Limiting values
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
30
V
VDGR
drain-gate voltage (DC)
RGS =20kΩ
-30
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =10V;
Figure 2 and 3
[1]
-
108
A
[2]
-75
A
Tmb = 100 °C; VGS =10V; Figure 2
[2]
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs;
Figure 3
-
435
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-
157
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
[1]
-
108
A
[2]
-75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 µs
-
435
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75A;
VDS ≤ 30 V; VGS = 10 V; RGS =50 Ω;
starting Tmb =25 °C
-
329
mJ


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