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BUK7507-30B Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BUK7507-30B
Description  TrenchMOS standard level FET
Download  15 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BUK7507-30B Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
BUK75/7607-30B
TrenchMOS™ standard level FET
Product data
Rev. 01 — 07 April 2003
5 of 15
9397 750 11232
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Characteristics
Table 4:
Characteristics
Tj =25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C30
-
-
V
Tj = −55 °C27
-
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Figure 9
Tj =25 °C2
3
4
V
Tj = 175 °C1
-
-
V
Tj = −55 °C
-
-
4.4
V
IDSS
drain-source leakage current
VDS = 30 V; VGS =0V
Tj =25 °C
-
0.02
1
µA
Tj = 175 °C
-
-
500
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Figure 7 and 8
Tj =25 °C
-
5.9
7
m
Tj = 175 °C
-
-
13.3
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =10V; VDD =24V;
ID =25A; Figure 14
-36
-
nC
Qgs
gate-source charge
-
9
-
nC
Qgd
gate-drain (Miller) charge
-
12
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
1820
2427
pF
Coss
output capacitance
-
632
758
pF
Crss
reverse transfer capacitance
-
256
351
pF
td(on)
turn-on delay time
VDD = 25 V; RL = 1.2 Ω;
VGS =10V; RG =10 Ω
-20
-
ns
tr
rise time
-
51
-
ns
td(off)
turn-off delay time
-
51
-
ns
tf
fall time
-
44
-
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
-
4.5
-
nH
from contact screw on
mounting base to centre of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to centre of
die SOT404
-
2.5
-
nH
Ls
internal source inductance
from source lead 6 mm from
package to source bond pad
-
7.5
-
nH


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