Philips Semiconductors

BUK75/7607-30B

TrenchMOS™ standard level FET

Product data

Rev. 01 — 07 April 2003

9 of 15

9397 750 11232

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 13. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

03nm87

0

25

50

75

100

02

46

8

VGS (V)

ID

(A)

Tj = 175 °C

Tj = 25 °C

03nm85

0

2

4

6

8

10

0

1020

3040

QG (nC)

VGS

(V)

VDD = 24 V

VDD = 14 V

03nm84

0

25

50

75

100

0.0

0.4

0.8

1.2

VSD (V)

IS

(A)

Tj = 175 °C

Tj = 25 °C