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PMEG1030EH Datasheet(PDF) 4 Page - NXP Semiconductors |
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PMEG1030EH Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 9 page PMEG1030EH_EJ_4 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 15 January 2010 4 of 9 NXP Semiconductors PMEG1030EH; PMEG1030EJ 10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤ 0.02. Table 8. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 0.01 A - 100 130 mV IF = 0.1 A - 170 200 mV IF = 1 A - 280 350 mV IF = 3 A - 390 530 mV IR reverse current VR = 5 V - 0.55 2 mA VR =8V - 0.8 2.5 mA VR =10V - 1 3 mA Cd diode capacitance VR =1V; f = 1MHz - 70 85 pF (1) Tamb = 125 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C (1) Tamb = 125 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values 006aaa290 10 1 103 102 104 IF (mA) 10−1 VF (V) 0 0.4 0.5 0.3 0.1 0.2 (1) (3) (4) (2) 006aaa291 103 10 102 105 104 106 IR ( μA) 1 VR (V) 010 8 46 2 (1) (2) (3) (4) |
Similar Part No. - PMEG1030EH_10 |
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Similar Description - PMEG1030EH_10 |
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