BUK9605-30A datasheet(3/7 Pages) NXP

Part #	BUK9605-30A

Description	TrenchMOS transistor Logic level FET

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Manufacturer	NXP [NXP Semiconductors]

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

BUK9605-30A

Logic level FET

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V

Fig.3. Safe operating area. T

mb = 25 ˚C

I

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

Z

th j-mb = f(t); parameter D = tp/T

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

0

20

40

60

80

100

120

140

160

180

Tmb / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

0.00001

0.001

0.1

10

0.001

0.01

0.1

1

D =

tp

T

P

t

D

Zth / (K/W)

t/S

D =

0.5

0.2

0.1

0.05

0.02

0

024

68

10

0

100

200

300

400

ID/V

VDS/V

VGS/V =

2.4

2.6

2.8

3.0

3.2

3.4

3.6

3.8

4.0

4.2

4.4

4.6

4.8

5.0

10.0

7.0

6.0

0

20

40

60

80

100

120

140

160

180

Tmb / C

ID%

Normalised Current Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

20406080

100

3

4

5

6

7

8

9

10

11

RDS(ON)/mOhm

ID/A

VGS/V =

3.0

3.2

3.4

3.6

4.0

5.0

1

10

100

1

10

100

1000

ID/A

RDS(ON) = VDS/ID

VDS/V

tp =

100mS

10mS

1mS

100uS

DC

August 1999

3

Rev 1.100

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