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PESD5V0S1UJ Datasheet(PDF) 9 Page - NXP Semiconductors |
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PESD5V0S1UJ Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page PESD5V0S1UJ_PESD12VS1UJ_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 3 June 2009 9 of 14 NXP Semiconductors PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression 8. Application information PESD5V0S1UJ and PESD12VS1UJ are designed for the protection of one unidirectional data or signal line from the damage caused by ESD and transient overvoltage. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD5V0S1UJ provides a surge capability of 890 W and the PESD12VS1UJ provides a surge capability of 600 W per line for an 8/20 µs waveform. Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. Fig 9. Application diagram 006aab251 GND line to be protected (positive signal polarity) DUT unidirectional protection of one line GND line to be protected (negative signal polarity) DUT |
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