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STP7N52K3 Datasheet(PDF) 8 Page - STMicroelectronics |
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STP7N52K3 Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 18 page Electrical characteristics STB7N52K3, STD7N52K3, STF7N52K3, STP7N52K3 8/18 Doc ID 14896 Rev 2 Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs temperature Figure 16. Normalized gate threshold voltage vs temperature Figure 17. Maximum avalanche energy vs temperature Figure 18. Source-drain diode forward characteristics VGS 6 4 2 0 0 5 Qg(nC) (V) 20 8 10 15 10 VDD=420V ID=6A 25 12 200 150 100 0 300 400 VDS VGS 50 250 350 30 35 AM05406v1 RDS(on) 2.0 1.5 1.0 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 125 150 2.5 0.0 AM05408v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 125 150 AM05407v1 EAS 0 40 TJ(°C) (mJ) 20 100 60 80 0 10 20 30 40 120 140 50 60 70 80 90 100 ID=6.2 A VDD=50 V AM05409v1 VSD 0 2 ISD(A) (V) 1 5 3 4 0.4 0.5 0.6 0.7 0.8 0.9 TJ=-50°C TJ=150°C TJ=25°C 7 6 8 0.3 AM05410v1 |
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