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P6SMA510A Datasheet(PDF) 2 Page - EIC discrete Semiconductors |
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P6SMA510A Datasheet(HTML) 2 Page - EIC discrete Semiconductors |
2 / 3 page ELECTRICAL CHARACTERISTICS (Rating at 25 °C ambient temperature unless otherwise specified) Breakdown Working Peak Maximum Maximum Maximum Maximum Voltage @ It Reverse Reverse Leakage Reverse Clamping Temperature ( Note 1 ) Voltage @ VRWM Current Voltage @ IRSM Co-efficient VBR (V) It VRWM IR IRSM VRSM of VBR Min. Max. (mA) (V) ( μA) (A) (V) (% / °C) P6SMA480A 456 504 1.0 408 5.0 0.91 658 0.110 P6SMA510A 485 535 1.0 434 5.0 0.86 698 0.110 P6SMA540A 513 567 1.0 459 5.0 0.81 740 0.110 P6SMA600A 570 630 1.0 510 5.0 0.76 789 0.110 Notes: (1) VBR measured after It applied for 300 μs., It = square wave pulse or equivalent. (2) VF = 8 Vmax., IF = 50 Amps. ( 480 Volts thru 600 Volts ) per 1/2 square or equivalent sine wave. PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. (3) "P6SMA" will be omitted in marking on the diode. Page 2 of 3 Rev. 01 : September 18, 2008 Type No. IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
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