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STB35NF10 Datasheet(PDF) 5 Page - STMicroelectronics |
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STB35NF10 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 14 page STB35NF10 - STP35NF10 Electrical characteristics 5/14 Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 40 160 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Forward on voltage ISD = 35A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see Figure 14) 160 720 9 ns nC A |
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