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STP7NK80Z Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP7NK80Z
Description  N-channel 800 V, 1.5 廓, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH??Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP7NK80Z Datasheet(HTML) 5 Page - STMicroelectronics

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STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Doc ID 8979 Rev 6
5/17
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current
Source-drain current (pulsed)
-
5.2
20.8
A
A
VSD
(2)
2.
Pulse width limited by safe operating area
Forward on voltage
ISD = 5.2 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5.2 A, di/dt = 100
A/µs
VDD = 50 V, Tj = 150°C
(see
Figure 22)
-
530
3.31
12.5
ns
µC
A
Table 8.
Gate-source zener diode
Symbol
Parameter
Test conditions
Min.
Typ. Max.
Unit
BVGSO
Gate-source breakdown voltage IGS= ± 1mA (open drain)
30
V


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