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TIM4450-12UL Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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TIM4450-12UL Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-12UL TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=41.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=10.5dB at 4.4GHz to 5.0GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25 °C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power at 1dB Gain Compression Point P1dB dBm 40.5 41.5 Power Gain at 1dB Gain Compression Point G1dB dB 9.5 10.5 Drain Current IDS1 A 3.2 3.8 Gain Flatness ∆G dB ±0.6 Power Added Efficiency ηadd VDS = 10V f = 4.4 to 5.0GHz % 40 3rd Order Intermodulation Distortion IM3 dBc -44 -47 Drain Current IDS2 Two-Tone Test Po=30.5dBm (Single Carrier Level) A 3.2 3.8 Channel Temperature Rise ∆Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C 80 Recommended gate resistance(Rg) : Rg= 100 Ω(MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25 °C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Transconductance gm VDS= 3V IDS= 4.0A mS 2500 Pinch-off Voltage VGSoff VDS = 3V IDS= 40mA V -1.0 -2.5 -4.0 Saturated Drain Current IDSS VDS = 3V VGS= 0V A 7.2 Gate-Source Breakdown Voltage VGSO IGS= -140 µA V -5 Thermal Resistance Rth(c-c) Channel to Case °C/W 2.0 2.4 u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Oct. 2006 |
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