MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TIM4450-12UL

TECHNICAL DATA

FEATURES

n HIGH POWER

n BROAD BAND INTERNALLY MATCHED FET

P1dB=41.5dBm at 4.4GHz to 5.0GHz

n HIGH GAIN

n HERMETICALLY SEALED PACKAGE

G1dB=10.5dB at 4.4GHz to 5.0GHz

RF PERFORMANCE SPECIFICATIONS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP. MAX.

Output Power at 1dB Gain

Compression Point

dBm

40.5

41.5



Power Gain at 1dB Gain

Compression Point

dB

9.5

10.5



Drain Current

A



3.2

3.8

Gain Flatness

∆G

dB





±0.6

Power Added Efficiency

%



40



3rd Order Intermodulation

Distortion

dBc

-44

-47



Drain Current

Two-Tone Test

Po=30.5dBm

(Single Carrier Level)

A



3.2

3.8

Channel Temperature Rise

∆Tch

(VDS X IDS + Pin – P1dB)

X Rth(c-c)

°C





80

Recommended gate resistance(Rg) : Rg= 100

Ω(MAX.)

ELECTRICAL CHARACTERISTICS

( Ta= 25

°C )

CHARACTERISTICS

SYMBOL

CONDITIONS

UNIT

MIN.

TYP.

MAX.

Transconductance

gm

mS



2500



Pinch-off Voltage

V

-1.0

-2.5

-4.0

Saturated Drain Current

A



7.2



Gate-Source Breakdown

Voltage

µA

V

-5





Thermal Resistance

Channel to Case

°C/W



2.0

2.4

u

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Oct. 2006