N01L6183AT datasheet(4/10 Pages) ONSEMI

Part #	N01L6183AT

Description	1Mb Ultra-Low Power Asynchronous CMOS SRAM

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Manufacturer	ONSEMI [ON Semiconductor]

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Rev.

8 | Page 4 of 10 | www.onsemi.com

N01L6183A

Power Savings with Page Mode Operation (WE = VIH)

Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal

organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power

saving feature.

The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open

and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant

bits and addressing the 16 words within the open page, power is reduced to the page mode value which is

considerably lower than standard operating currents for low power SRAMs.

Page Address (A4 - A15 )

LB, UB

OE

CE

Word Address (A0 - A3)

Open page

Word 1

Word 2

Word 16

...

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