MMUN2211LT3G datasheet(4/18 Pages) ONSEMI

Part #	MMUN2211LT3G

Description	Bias Resistor Transistor NPN Silicon Surface Mount Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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MMUN2211LT1G Series

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TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G

100

10

1

0.1

0.01

0.001

0

123

4

Vin, INPUT VOLTAGE (VOLTS)

5

678

9

10

VO = 5 V

TA = −25°C

75°C

25°C

1000

100

10

1

10

100

IC, COLLECTOR CURRENT (mA)

50

010

20

30

40

4

3

1

2

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

f = 1 MHz

lE = 0 A

TA = 25°C

VCE = 10 V

Figure 1. Derating Curve

250

200

150

100

50

0

−50

0

50

100

150

TA, AMBIENT TEMPERATURE (5°C)

Figure 2. VCE(sat) vs. IC

RqJA= 625°C/W

TA = 75°C

−25°C

25°C

10

020

30

IC, COLLECTOR CURRENT (mA)

10

1

0.1

40

50

Figure 3. DC Current Gain

TA = −25°C

75°C

25°C

VO = 0.2 V

1

0.1

0.01

0.001

020

40

60

80

IC, COLLECTOR CURRENT (mA)

IC/IB = 10

TA = −25°C

75°C

25°C

Figure 4. Output Capcitance

Figure 5. Output Current vs. Input Voltage

Figure 6. Input Voltage vs. Output Current

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MMUN2211LT3G Datasheet(PDF) 4 Page - ON Semiconductor

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