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STP5NK90Z Datasheet(PDF) 4 Page - STMicroelectronics |
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STP5NK90Z Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 15 page Obsolete Product(s) - Obsolete Product(s) Electrical ratings STP5NK90Z - STF5NK90Z 4/15 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Table 4. Gate-source zener diode Symbol Parameter Test conditions Min Typ. Max Unit BVGSO Gate-Source breakdown voltage Igs=±1mA (Open drain) 30 V |
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