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NCE75H21 Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE75H21 Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE75H21 Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 1) RθJC 0.31 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 75 - - V Zero Gate Voltage Drain Current IDSS VDS=75V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±200 nA On Characteristics Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V 25℃ - 2.9 4 mΩ Drain-Source On-State Resistance 125℃ RDS(ON) VGS=10V, ID=40A - 4.7 6.5 mΩ Forward Transconductance gFS VDS=25V,ID=40A 100 165 - S Dynamic Characteristics Input Capacitance Clss - 12100 - PF Output Capacitance Coss - 2000 - PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz - 480 - PF Switching Characteristics Turn-on Delay Time td(on) - 20 - nS Turn-on Rise Time tr - 190 - nS Turn-Off Delay Time td(off) - 130 - nS Turn-Off Fall Time tf VDD=38V,ID=40A VGS=10V,RGEN=1.2Ω (Note2) - 120 - nS Total Gate Charge Qg - 410 620 nC Gate-Source Charge Qgs - 90 140 nC Gate-Drain Charge Qgd VDS=60V,ID=40A, VGS=10V(Note2) - 140 210 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V,IS=40A - - 1.2 V Reverse Recovery Time trr - 120 210 nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 40A di/dt = 100A/μs(Note2) - 860 1300 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Surface Mounted on FR4 Board, t ≤ 10 sec. 2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%. 3. EAS condition：Tj=25℃,VDD=37.5V,VG=10V,L=2mH,Rg=25Ω,IAS=37A 4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS，TJ ≤175°C |
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