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STGW19NC60HD Datasheet(PDF) 4 Page - STMicroelectronics |
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STGW19NC60HD Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGB19NC60HD, STGF19NC60HD, STGP19NC60HD, STGW19NC60HD 4/17 Doc ID 12819 Rev 6 2 Electrical characteristics (TJ=25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 12 A VGE= 15 V, IC=12 A,TJ=125 °C 1.8 1.6 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V,TJ= 125 °C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20 V ±100 nA gfs (1) 1. Pulsed: Pulse duration = 300 ìs, duty cycle 1.5% Forward transconductance VCE = 15 V, IC= 12 A 5 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 - 1180 130 36 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 5 A, VGE = 15 V, Figure 20 - 53 10 23 - nC nC nC |
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