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STFW3N150 Datasheet(PDF) 5 Page - STMicroelectronics |
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STFW3N150 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 15 page STFW3N150, STP3N150, STW3N150 Electrical characteristics Doc ID 13102 Rev 9 5/15 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 750 V, ID = 1.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) - 24 47 45 61 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 2.5 10 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 2.5 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD= 60 V (see Figure 20) - 410 2.4 11.7 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, di/dt = 100 A/µs VDD= 60 V, Tj = 150 °C (see Figure 20) - 540 3.3 12.3 ns µC A |
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