STFW3N150 datasheet(5/15 Pages) STMICROELECTRONICS

Part #	STFW3N150

Description	N-channel 1500 V, 6 廓, 2.5 A, PowerMESH??Power MOSFET in TO-220, TO-247, TO-3PF

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STFW3N150, STP3N150, STW3N150

Electrical characteristics

Doc ID 13102 Rev 9

5/15

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min. Typ.

Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 750 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

24

47

45

61

-

ns

Table 8.

Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

2.5

10

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 2.5 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2.5 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 20)

-

410

2.4

11.7

ns

µC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 2.5 A, di/dt = 100 A/µs

VDD= 60 V, Tj = 150 °C

(see Figure 20)

-

540

3.3

12.3

ns

µC

A

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