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STD9NM50N-1 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD9NM50N-1 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 17 page 10 April 2007 Rev 1 1/17 17 STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47 Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Applications ■ Switching application Internal schematic diagram Type VDSS (@Tjmax) RDS(on) ID STD9NM50N 550V <0.56 Ω 7.5A STD9NM50N-1 550V <0.56 Ω 7.5A STP9NM50N 550V <0.56 Ω 7.5A STF9NM50N 550V <0.56 Ω 7.5A(1) 1. Limited only by maximum temperature allowed TO-220 DPAK IPAK TO-220FP 1 2 3 3 2 1 1 3 1 2 3 www.st.com Order codes Part number Marking Package Packaging STD9NM50N-1 D9NM50N IPAK Tube STD9NM50N D9NM50N DPAK Tape & reel STP9NM50N P9NM50N TO-220 Tube STF9NM50N F9NM50N TO-220FP Tube Obsolete Product(s) - Obsolete Product(s) |
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