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STB21NM60ND Datasheet(PDF) 5 Page - STMicroelectronics |
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STB21NM60ND Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND Electrical characteristics 5/18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 17 68 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 17 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) 150 0.90 13 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) 210 1.6 15 ns µC A |
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