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BYD33J Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BYD33J Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page BYD33D - BYD33M AVALANCHE FAST SOFT-RECOVERY RECTIFIER DIODES PRV : 200 - 1000 Volts Io : 1.3 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BYD 33D BYD 33G BYD 33J BYD 33K BYD 33M UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 400 600 800 1000 V Maximum Continuous Reverse Voltage VR 200 400 600 800 1000 V Min. Reverse Avalanche Breakdown Voltage @ IR = 0.1 mA V(BR)R-min 300 500 700 900 1100 V Maximum Average Forward Current Ttp = 55 °C (Note 1) IF(AV) 1.3 A Maximum Non-Repetitive Peak Forward Surge Current IFSM 20 A Maximum Repetitive Peak Forward Current IFRM 12 A Maximum Forward Voltage at 1.0 Amp. VF 1.3 V Maximum Reverse Current at Reverse Voltage IR 1.0 µA Maximum Reverse Current at Reverse Voltage Tj = 165 °C IR(H) 100 µA Maximum Reverse Recovery Time (Note 2) Trr 250 300 ns Thermal Resistance - Junction to Ambient R θJA 120 K / W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Lead Length 10 mm. (2) Measured with IF = 1 Amp to VR ≥ 30V Page 1 of 2 Rev. 02 : March 25, 2005 RATING DO - 41 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Pb / RoHS Free |
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